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Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x < y similar to 0.8)
Ioffe Institute, Russia.
Ioffe Institute, Russia.
Ioffe Institute, Russia.
Ioffe Institute, Russia.
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2016 (English)In: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6, WILEY-V C H VERLAG GMBH , 2016, Vol. 13, no 5-6, 232-238 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on photoluminescence (PL) spectroscopy and electron microscopy studies of an AlGaN quantum well (QW) structure grown by molecular beam epitaxy under metal-rich conditions with substrate rotation. Both techniques reveal unintentional formation within the AlGaN barriers of a quasiperiodic structure of thin Ga-rich layers, whose period is controlled by both the substrate rotation rate and the AlGaN growth rate. These compositional modulations act as 1-3 monolayer thick QWs emitting below 250 nm with an internal quantum efficiency (IQE) as high as similar to 30% at room temperature under weak excitation. Variational calculations of the QW exciton properties indicate that the observed high IQE can result from strong three-dimensional localization of the excitons confined in the narrow QWs. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2016. Vol. 13, no 5-6, 232-238 p.
Series
Physica Status Solidi C-Current Topics in Solid State Physics, ISSN 1862-6351
Keyword [en]
AlGaN; quantum wells; excitons; molecular beam epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133134DOI: 10.1002/pssc.201600009ISI: 000387957200013OAI: oai:DiVA.org:liu-133134DiVA: diva2:1055225
Conference
11th International Conference on Nitride Semiconductors (ICNS)
Available from: 2016-12-12 Created: 2016-12-09 Last updated: 2016-12-12

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CiteExportLink to record
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Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
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  • de-DE
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  • nn-NB
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