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Exploring the selectivity of WO3 with iridium catalyst in an ethanol/naphthalene mixture using multivariate statistics
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering. University of Saarland, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, Faculty of Science & Engineering.
University of Oulu, Finland.
University of Saarland, Germany.
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2016 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 618, 263-270 p.Article in journal (Refereed) Published
Abstract [en]

Temperature cycled operation and multivariate statistics have been used to compare the selectivity of two gate (i.e. sensitive) materials for gas-sensitive, silicon carbide based field effect transistors towards naphthalene and ethanol in different mixtures of the two substances. Both gates have a silicon dioxide (SiO2) insulation layer and a porous iridium (Ir) electrode. One of it has also a dense tungsten trioxide (WO3) interlayer between Ir and SiO2. Both static and transient characteristics play an important role and can contribute to improve the sensitivity and selectivity of the gas sensor. The Ir/SiO2 is strongly influenced by changes in ethanol concentration, and is, thus, able to quantify ethanol in a range between 0 and 5 ppm with a precision of 500 ppb, independently of the naphthalene concentrations applied in this investigation. On the other hand, this sensitivity to ethanol reduces its selectivity towards naphthalene, whereas Ir/WO3/SiO2 shows an almost binary response to ethanol. Hence, the latter has a better selectivity towards naphthalene and can quantify legally relevant concentrations down to 5 ppb with a precision of 2.5 ppb, independently of a changing ethanol background between 0 and 5 ppm. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2016. Vol. 618, 263-270 p.
Keyword [en]
Metal oxide; Pulsed laser deposition; Silicon carbide field-effect transistor; SiC-FET; Gas sensor; Temperature cycled operation; Volatile organic compounds; Quantification
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:liu:diva-133530DOI: 10.1016/j.tsf.2016.08.002ISI: 000389164400006OAI: oai:DiVA.org:liu-133530DiVA: diva2:1060868
Conference
9th International Workshop on Semiconductor Gas Sensors (SGS)
Available from: 2016-12-30 Created: 2016-12-29 Last updated: 2017-01-25

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The full text will be freely available from 2018-08-04 14:48
Available from 2018-08-04 14:48

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