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AlGaN nanostructures with extremely high quantum yield at 300 K
Russian Academic Science, Russia.
Russian Academic Science, Russia.
Russian Academic Science, Russia.
Russian Academic Science, Russia.
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2016 (English)In: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 58, no 11, 2261-2266 p.Article in journal (Refereed) Published
Abstract [en]

Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of similar to 300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.

Place, publisher, year, edition, pages
MAIK NAUKA/INTERPERIODICA/SPRINGER , 2016. Vol. 58, no 11, 2261-2266 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133528DOI: 10.1134/S1063783416110366ISI: 000388695700020OAI: oai:DiVA.org:liu-133528DiVA: diva2:1060872
Note

Funding Agencies|Russian Science Foundation [14-22-00107]

Available from: 2016-12-30 Created: 2016-12-29 Last updated: 2016-12-30

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Thin Film PhysicsFaculty of Science & Engineering
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