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Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxy
Tokyo University of Agriculture and Technology, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Tokyo University of Agriculture and Technology, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4547-6673
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2016 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 456, 145-150 p.Article in journal (Refereed) Published
Abstract [en]

The growth of thick InGaN layers on free-standing GaN (000 (1) over bar substrates was studied using tri-halide vapor phase epitaxy. It was found that high-indium-content InGaN can be grown under higher InCl3 input partial pressure at higher growth temperature, which allows the fabrication of a high crystalline quality InGaN layer with a smooth surface morphology. Using the growth conditions of high InCl3 input partial pressure and high growth temperature, crack- and droplet-free InGaN layers with a thickness of over 10 mu m and with an indium fraction of 0.05 were successfully grown. Although the surface showed many hillocks, the number of hillocks was reduced upon growth of thicker InGaN layers. Photoluminescence measurements confirm that thick InGaN layers could be successfully grown without degradation of the crystalline quality. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2016. Vol. 456, 145-150 p.
Keyword [en]
Hydride vapor phase epitaxy; Chloride vapor phase epitaxy; Nitrides; Semiconducting indium compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133731DOI: 10.1016/j.jcrysgro.2016.08.019ISI: 000389590400024OAI: oai:DiVA.org:liu-133731DiVA: diva2:1063909
Note

Funding Agencies|Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) [26.5164, 26246018]

Available from: 2017-01-11 Created: 2017-01-09 Last updated: 2017-01-22

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Eriksson, MartinKarlsson, FredrikMonemar, BoHoltz, Per-Olof
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