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Novel GaNAs and GaNP-based Nanowires - Promising Materials for Optoelectronics and Photonics
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-6405-9509
Ehime University, Japan.
University of Calif San Diego, USA.
2016 (English)In: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), IEEE , 2016, 38-41 p.Conference paper (Refereed)
Abstract [en]

In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zincblende NWs of various diameters. We also demonstrate that, though the GaNxP1-x alloys have rather wide bandgap energies of 1.9 - 2.3 eV, the coaxial GaNP NWs absorb infrared light via two-step two-photon absorption.

Place, publisher, year, edition, pages
IEEE , 2016. 38-41 p.
Keyword [en]
nanowire; dilute nitrides; gallium phosphide; gallium arsenide
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Identifiers
URN: urn:nbn:se:liu:diva-134518DOI: 10.1109/NANO.2016.7751293ISI: 000391840000012ISBN: 978-1-5090-1493-4 OAI: oai:DiVA.org:liu-134518DiVA: diva2:1074328
Conference
16th IEEE International Conference on Nanotechnology (IEEE-NANO)
Available from: 2017-02-15 Created: 2017-02-15 Last updated: 2017-02-15

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Buyanova, IrinaChen, Weimin
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