Characterization of Quantum Dot-like Emission from GaAs/GaNAs Core/Shell Nanowires
2016 (English)In: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), IEEE , 2016, 42-44 p.Conference paper (Refereed)
this work we investigate properties of ultra-narrow photoluminescence lines originating from recombination of excitons trapped by short-range potential fluctuations, caused by alloy disorder in GaAs/GaNAs core/shell nanowires. From power-dependent photoluminescence measurements we show that the emission behavior is consistent with biexciton-exciton cascade recombination in quantum dots. We also show that the thermal activation energy from the related localized states is of the order of 9-30 meV, suggesting a rather shallow confinement potential.
Place, publisher, year, edition, pages
IEEE , 2016. 42-44 p.
nanowires; quantum dots; GaNAs; biexciton
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-134519DOI: 10.1109/NANO.2016.7751294ISI: 000391840000013ISBN: 978-1-5090-1493-4 OAI: oai:DiVA.org:liu-134519DiVA: diva2:1074329
16th IEEE International Conference on Nanotechnology (IEEE-NANO)