Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
2017 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 17, no 3, 1782-1786 p.Article in journal (Refereed) Published
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum phtonics architecture relying on single photon sources and qubits.
Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2017. Vol. 17, no 3, 1782-1786 p.
Color centers; silicon carbide; photonics; spintronics; nanopillars; spin-qubits
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:liu:diva-136052DOI: 10.1021/acs.nanolett.6b05102ISI: 000396185800067PubMedID: 28225630OAI: oai:DiVA.org:liu-136052DiVA: diva2:1084849
Funding Agencies|National Science Foundation DMR ; Army Research Office [W911NF1310309]; German Federal Ministry of Education and Research (BMBF) through the ERA.Net RUS Plus Project DIABASE; JSPS 2017-03-272017-03-272017-04-03