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Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-5751-6225
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
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2017 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 17, no 3, 1775-1781 p.Article in journal (Refereed) Published
Abstract [en]

Nanowire (NW) lasers operating in the near infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III-V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic "S"-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, g(th), of 3300 cm(-1) and a spontaneous emission coupling factor beta, of 0.045. The dominant lasing peak is identified to arise from the HE21b, cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional pas sivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2017. Vol. 17, no 3, 1775-1781 p.
Keyword [en]
Nanowire lasers; dilute nitride; GaAs/GaAsN; core/shell structure
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-136051DOI: 10.1021/acs.nanolett.6b05097ISI: 000396185800066PubMedID: 28170267OAI: oai:DiVA.org:liu-136051DiVA: diva2:1084861
Note

Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-05532]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; KAKENHI from the Japan Society for the Promotion of Science [16H05970, 23686004]; Kato Foundation for Promotion of Science; Kurata Memorial Hitachi Science and Technology Foundation; Murata Science Foundation

Available from: 2017-03-27 Created: 2017-03-27 Last updated: 2017-04-11

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The full text will be freely available from 2018-02-07 15:24
Available from 2018-02-07 15:24

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