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Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p-GaN light-emitting diode
Linköping University, Department of Science and Technology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-6235-7038
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, Faculty of Science & Engineering.
2017 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 1, 1600333Article in journal (Refereed) Published
Abstract [en]

As the low-temperature aqueous chemical synthesis (LT-ACS), holds great promises for the synthesis of one-dimensional (1D) ZnO nanostructure-based light-emitting diodes (LEDs) and hence require parameter tuning for optimal performance. N-ZnO nanorods (NRs)/p-GaN heterojunction LEDs have been synthesized by the LT-ACS using ZnO nanoparticle (NPs) seed layers prepared with different precursor solutions. The effect of these seed layers on the interface defect properties and emission intensity of the as-synthesized n-Zn/p-GaN heterojunction LEDs has been demonstrated by spatially resolved cathodoluminescence (CL) and electroluminescence (EL) measurements, respectively. A significant reduction of the interface defects in the n-ZnO NRs/p-GaN heterostructure synthesized from a seed layer prepared from zinc acetate (ZnAc) with a mixture of potassium hydroxide (KOH) and hexamethylenetetramine (HMTA) (donated as ZKH seed) compared with those prepared from ZnAc and KOH (donated as ZK seed) is observed as revealed by spatially resolved CL. Consequently, the LEDs based on n-ZnO NRs/p-GaN prepared from ZKH seed show an improvement in the yellow emission (approximate to 578nm) compared to that based on the ZK seed as deduced from the electroluminescence measurements. The improvement in the yellow EL emission on the ZKH LED probably attributed to the low presence of the non-radiative defect as deduced by light-output current (L-I) characteristics analysis.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2017. Vol. 214, no 1, 1600333
Keyword [en]
GaN; interface defects; light-emitting diodes; low-temperature aqueous chemical synthesis; seed layers; ZnO
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-136230DOI: 10.1002/pssa.201600333ISI: 000394423400006OAI: oai:DiVA.org:liu-136230DiVA: diva2:1086222
Note

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Functional Materials (Faculty Grant SFO-Mat-LiU) at Linkoping University [2009-00971]

Available from: 2017-03-31 Created: 2017-03-31 Last updated: 2017-03-31

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Alnoor, HatimPozina, GaliaWillander, MagnusNur, Omer
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