Polarization of stacking fault related luminescence in GaN nanorods
2017 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 7, no 1, 015303Article in journal (Refereed) Published
Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along  direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL) measured at low temperature for a single NR demonstrated an excitonic line at similar to 3.48 eV and the stacking faults (SFs) related transition at similar to 3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes. (C) 2017 Author(s).
Place, publisher, year, edition, pages
AMER INST PHYSICS , 2017. Vol. 7, no 1, 015303
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-136228DOI: 10.1063/1.4974461ISI: 000395789900073OAI: oai:DiVA.org:liu-136228DiVA: diva2:1086228
Funding Agencies|Swedish Research Council [621-2012-4420]; Carl Tryggers foundation; Angpanneforeningen; Russian Science Foundation [16-12-10503]2017-03-312017-03-312017-04-25