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Polarization of stacking fault related luminescence in GaN nanorods
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
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2017 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 7, no 1, 015303Article in journal (Refereed) Published
Abstract [en]

Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL) measured at low temperature for a single NR demonstrated an excitonic line at similar to 3.48 eV and the stacking faults (SFs) related transition at similar to 3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes. (C) 2017 Author(s).

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2017. Vol. 7, no 1, 015303
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-136228DOI: 10.1063/1.4974461ISI: 000395789900073OAI: oai:DiVA.org:liu-136228DiVA: diva2:1086228
Note

Funding Agencies|Swedish Research Council [621-2012-4420]; Carl Tryggers foundation; Angpanneforeningen; Russian Science Foundation [16-12-10503]

Available from: 2017-03-31 Created: 2017-03-31 Last updated: 2017-04-25

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Pozina, GaliaForsberg, MathiasSerban, AlexandraHsiao, Ching-LienJunaid, MuhammadBirch, Jens
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