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Al-implanted on-axis 4H-SiC MOSFETs
IMB CNM CSIC C Tillers, Spain.
IMB CNM CSIC C Tillers, Spain.
IMB CNM CSIC C Tillers, Spain.
IMB CNM CSIC C Tillers, Spain.
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2017 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, no 3, 035006Article in journal (Refereed) Published
Abstract [en]

In this paper, the impact of temperature and time stress on gate oxide stability of several multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was processed under a rapid thermal process (RTP) furnace. The variation of the main electrical parameters is shown. We report the high quality and stability of such implanted MOSFETs, and point out the very low roughness effect of the on-axis-cut sample. Particularly, in the best case, effective channel mobility (mu(fe)) overcomes 20 cm(2). V-1. s(-1) at 300 degrees C for a channel length of 12 mu m, which is very encouraging for implantation technology. Starting from 200 degrees C, the apparent increase of the mu(fe) peak of the MOSFET ceases and tends to saturate with further temperature increase. This is an indication of the potential of MOSFETs built on on-axis substrates. Thus, starting from the real case of an implanted MOSFET, the global purpose is to show that the electrical performance of such an on-axis-built device can tend to reach that of the ideal case, i.e. epitaxied MOSFET, and even overcome its electrical limitation, e.g. in terms of threshold voltage stability at high temperature.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 32, no 3, 035006
Keyword [en]
4H-SiC; on-axis; MOSFET; Al-implanted; electrical characterization; time bias stress instability; gate oxide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-136165DOI: 10.1088/1361-6641/32/3/035006ISI: 000395439200001OAI: oai:DiVA.org:liu-136165DiVA: diva2:1086666
Note

Funding Agencies|European Commission projects Silicon Carbide Power Electronics Technology for Energy Efficient Devices, SPEED, FP7 Large Project [NMP3-LA-2013-604057]; Spanish Ministry of Science and Innovation under the project Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy RUE; Trench-SiC project [TEC2011-22607]; Consolider-Ingenio Project [CSD 2009-00046]

Available from: 2017-04-03 Created: 2017-04-03 Last updated: 2017-04-03

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