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Effects of Nitrogen Incorporation on Structural and Optical Properties of GaNAsP Nanowires
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-5751-6225
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
University of Calif San Diego, CA 92093 USA.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
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2017 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 121, no 12, 7047-7055 p.Article in journal (Refereed) Published
Abstract [en]

In this work, we carry out a comprehensive investigation of structural and optical effects in GaNAsP nanowires (NWs), which are novel materials promising for advanced photovoltaic applications. Despite a significant mismatch in electronegativity between N and As/P atoms, we show that incorporation of nitrogen does not degrade structural quality of the nanowires and the fabricated NW arrays have excellent compositional uniformity among individual wires. From temperature-dependent photoluminescence (PL) measurements, statistical fluctuations of the alloy composition are shown to lead to localization of photoexcited carriers at low temperatures but do not affect material properties at room temperature. According to time-resolved PL measurements, the room-temperature carrier lifetime increases in the GaNAsP NWs as compared with the GaAsP NWs, which indicates reduced nonradiative recombination. Moreover, in spite of the very low N content in the studied NWs (up to 0.16%), their bandgap energy can be tuned by more than 100 meV. This is accompanied by about 30% reduction in the temperature dependence of the bandgap energy. The presented results demonstrate that alloying of GaAsP with nitrogen provides an additional means of design optimization, beneficial for, e.g., NW-based intermediate band solar cells that are highly dependent on the optimum bandgap structure.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2017. Vol. 121, no 12, 7047-7055 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-136889DOI: 10.1021/acs.jpcc.7b00985ISI: 000398247500070OAI: oai:DiVA.org:liu-136889DiVA: diva2:1092064
Note

Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-0.5532]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; National Science Foundation [DMR-1106369]

Available from: 2017-04-29 Created: 2017-04-29 Last updated: 2017-09-07

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The full text will be freely available from 2018-03-06 14:59
Available from 2018-03-06 14:59

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