liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces
CIC NanoGUNE, Spain.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Technical University of Dresden, Germany.
National Centre Nanosci and Technology, Peoples R China.
Show others and affiliations
2017 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 29, no 19, 1606901Article in journal (Refereed) Published
Abstract [en]

Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors. This study measures and compares metal/solution-processed electron-transporting polymer interface energy barriers by in-device hot-electron spectroscopy and ultraviolet photoemission spectroscopy. It not only demonstrates in-device hot-electron spectroscopy as a direct and reliable technique for these studies but also brings it closer to technological applications by working ex situ under ambient conditions. Moreover, this study determines that the contamination layer coming from air exposure does not play any significant role on the energy barrier alignment for charge transport. The theoretical model developed for this work confirms all the experimental observations.

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2017. Vol. 29, no 19, 1606901
Keyword [en]
energy barriers; hot electron transistors; organic electronics; polymer; spectroscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-138246DOI: 10.1002/adma.201606901ISI: 000401170600030PubMedID: 28295714OAI: oai:DiVA.org:liu-138246DiVA: diva2:1109379
Note

Funding Agencies|European Research Council [257654-SPINTROS]; Spanish MINECO [MAT2015-65159-R]; Basque Government [PC2015-1-01, PRE_2016_2_0025]; Deutsche Forschungsgemeinschaft [OR 349/1-1]

Available from: 2017-06-14 Created: 2017-06-14 Last updated: 2017-06-14

Open Access in DiVA

No full text

Other links

Publisher's full textPubMed

Search in DiVA

By author/editor
Braun, SlawomirLiu, XianjieFahlman, Mats
By organisation
Surface Physics and ChemistryFaculty of Science & Engineering
In the same journal
Advanced Materials
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 820 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf