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Graphene integration with nitride semiconductors for high power and high frequency electronics
CNR, Italy.
CNR, Italy.
CNR, Italy.
CNR, Italy.
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2017 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 214, no 4, 10600460Article in journal (Refereed) Published
Abstract [en]

Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors. Due to its attractive electrical, optical, mechanical, and thermal properties, graphene (Gr) integration with III-N technology has been considered in the last few years, in order to address some of the major issues which still limit the performances of GaN-based devices. To date, most of the studies have been focused on the use of Gr as transparent conductive electrode (TCE) to improve current spreading from top electrodes and light extraction in GaN-LEDs. This paper will review recent works evaluating the benefits of Gr integration with III-N for high power and high frequency electronics. From the materials side, recent progresses in the growth of high quality GaN layers on Gr templates and in the deposition of Gr on III-N substrates and templates will be presented. From the applications side, strategies to use Gr for thermal management in high-power AlGaN/GaN transistors will be discussed. Finally, recent proposals of implementing new ultra-high-frequency (THz) transistors, such as the Gr base hot electron transistor (GBHET), by Gr integration with III-N will be highlighted. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2017. Vol. 214, no 4, 10600460
Keyword [en]
graphene; III-nitride semiconductors; power electronics
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-138492DOI: 10.1002/pssa.201600460ISI: 000402158300011OAI: oai:DiVA.org:liu-138492DiVA: diva2:1111646
Conference
E-MRS Spring Symposium L on E Wide Bandgap Materials for Electron Devices
Note

Funding Agencies|FLAGERA project "GraNitE: Graphene heterostructures with Nitrides for high frequency Electronics"; FLAGERA project "GRIFONE: Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications"

Available from: 2017-06-19 Created: 2017-06-19 Last updated: 2017-06-19

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Yakimova, Rositsa
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Semiconductor MaterialsFaculty of Science & Engineering
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