liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7171-5383
2017 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 35, no 3, 031201Article in journal (Refereed) Published
Abstract [en]

Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before a fluorinated CVD chemistry can be adopted, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Here, the authors present dopant incorporation studies for n-type doping with N using N-2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC. The precursors used were SiF4 as Si precursor and the source of F together with CH4 as C precursor. The authors find that it is possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type materials using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si-F and Al-F bonds. (C) 2017 American Vacuum Society.

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS , 2017. Vol. 35, no 3, 031201
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-138489DOI: 10.1116/1.4979279ISI: 000402053900006OAI: oai:DiVA.org:liu-138489DiVA: diva2:1111652
Note

Funding Agencies|Knut & Alice Wallenberg Foundation (KAW) project "Isotopic Control for Ultimate Material Properties"; Swedish Foundation for Strategic Research project "SiC-Material for Energy-Saving Power Electronics" [EM11-0034]

Available from: 2017-06-19 Created: 2017-06-19 Last updated: 2017-06-19

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Stenberg, PontusJanzén, ErikPedersen, Henrik
By organisation
Semiconductor MaterialsFaculty of Science & EngineeringChemistry
In the same journal
Journal of Vacuum Science & Technology B
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 200 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf