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Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
University of Cambridge, England.
Chalmers, Sweden.
University of Cambridge, England.
National Phys Lab, England.
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2017 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 119, 426-430 p.Article in journal (Refereed) Published
Abstract [en]

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below T*, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. (C) 2017 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2017. Vol. 119, 426-430 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-138872DOI: 10.1016/j.carbon.2017.04.019ISI: 000402713300050OAI: oai:DiVA.org:liu-138872DiVA: diva2:1115975
Note

Funding Agencies|Engineering and Physical Sciences Research Council [EP/L020963/1]; EU [696656 - GrapheneCore 1]

Available from: 2017-06-27 Created: 2017-06-27 Last updated: 2017-06-27

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Yakimova, Rositsa
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CiteExportLink to record
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