liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High rate growth of In2O3 at 1000 degrees C by halide vapor phase epitaxy
Tokyo University of Agriculture and Technology, Japan; Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Tokyo University of Agriculture and Technology, Japan.
Show others and affiliations
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, no 12, 1202B3Article in journal (Refereed) Published
Abstract [en]

In this work, the first-ever growth of cubic-In2O3 at 1000 degrees C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O2 as precursors in a N-2 flow. The growth rates of In2O3 layers on (001) beta-Ga2O3 and (0001) sapphire substrates were 4.1 and 5.1 mu m/h, respectively, even at the high growth temperature applied, which are approximately half the growth rate of beta-Ga2O3 homoepitaxially grown by HVPE at 1000 degrees C. Theoretical thermodynamic analyses were also conducted, and results confirmed the growth of In2O3 at temperatures above 1000 degrees C by HVPE. The as-grown In2O3 layers were light yellow-green in color. The In2O3 layers grown on the (001) beta-Ga2O3 and (0001) sapphire substrates exhibited an optical absorption edge at about 370 nm, in addition to n-type conductivity with electron concentrations of 2.7 x 10(18) and 1.7 x10(18) cm(-3), and electron mobilities of 16.2 and 22.7cm(2)V(-1) s(-1), respectively. (C) 2016 The Japan Society of Applied Physics

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2016. Vol. 55, no 12, 1202B3
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139313DOI: 10.7567/JJAP.55.1202B3ISI: 000403934900001OAI: oai:DiVA.org:liu-139313DiVA: diva2:1120933
Note

Funding Agencies|Japan Society for the Promotion of Science [16H06417, 16K04944]

Available from: 2017-07-07 Created: 2017-07-07 Last updated: 2017-07-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Paskov, PlamenMonemar, Bo
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Japanese Journal of Applied Physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 55 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf