High rate growth of In2O3 at 1000 degrees C by halide vapor phase epitaxyShow others and affiliations
2016 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 55, no 12, article id 1202B3Article in journal (Refereed) Published
Abstract [en]
In this work, the first-ever growth of cubic-In2O3 at 1000 degrees C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O2 as precursors in a N-2 flow. The growth rates of In2O3 layers on (001) beta-Ga2O3 and (0001) sapphire substrates were 4.1 and 5.1 mu m/h, respectively, even at the high growth temperature applied, which are approximately half the growth rate of beta-Ga2O3 homoepitaxially grown by HVPE at 1000 degrees C. Theoretical thermodynamic analyses were also conducted, and results confirmed the growth of In2O3 at temperatures above 1000 degrees C by HVPE. The as-grown In2O3 layers were light yellow-green in color. The In2O3 layers grown on the (001) beta-Ga2O3 and (0001) sapphire substrates exhibited an optical absorption edge at about 370 nm, in addition to n-type conductivity with electron concentrations of 2.7 x 10(18) and 1.7 x10(18) cm(-3), and electron mobilities of 16.2 and 22.7cm(2)V(-1) s(-1), respectively. (C) 2016 The Japan Society of Applied Physics
Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2016. Vol. 55, no 12, article id 1202B3
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139313DOI: 10.7567/JJAP.55.1202B3ISI: 000403934900001OAI: oai:DiVA.org:liu-139313DiVA, id: diva2:1120933
Note
Funding Agencies|Japan Society for the Promotion of Science [16H06417, 16K04944]
2017-07-072017-07-072017-07-07