liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
North Carolina State University, NC 27695 USA.
North Carolina State University, NC 27695 USA.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. North Carolina State University, NC 27695 USA.
North Carolina State University, NC 27695 USA.
Show others and affiliations
2017 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 121, no 23, 235104Article in journal (Refereed) Published
Abstract [en]

The thermal conductivity of undoped, Sn-doped, and Fe-doped beta-Ga2O3 bulk crystals was measured by the 3 omega technique in the temperature range of 295-410 K. A unique approach for extracting the thermal conductivity along the lateral and transverse heat flow directions was used in order to determine the thermal conductivity along different crystallographic directions. The data analysis at room temperature confirmed the expected anisotropy of the thermal conductivity of beta-Ga2O3, revealing the highest value of similar to 29 W/m K in the [010] direction. The thermal conductivity of the Sn-doped and Fe-doped beta-Ga2O3 samples was found to be lower than that of the undoped samples due to the enhanced phonon-impurity scattering contribution, which reduces the thermal conductivity. This tendency was maintained for the thermal conductivity at elevated temperatures. The thermal conductivity in all samples decreased with increasing temperature, but the slope of the temperature dependence was found to depend on both the doping and the crystallographic orientation. Published by AIP Publishing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2017. Vol. 121, no 23, 235104
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139280DOI: 10.1063/1.4986478ISI: 000404047400024OAI: oai:DiVA.org:liu-139280DiVA: diva2:1120976
Note

Funding Agencies|NSF [CBET-1336464, DMR-1506159]; Swedish Energy Agency [P39897-1]

Available from: 2017-07-07 Created: 2017-07-07 Last updated: 2017-07-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Paskov, Plamen
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Journal of Applied Physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 55 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf