liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
University of Chicago, IL 60637 USA.
University of Chicago, IL 60637 USA.
University of Chicago, IL 60637 USA.
Hungarian Academic Science, Hungary.
Show others and affiliations
2017 (English)In: Physical Review X, ISSN 2160-3308, E-ISSN 2160-3308, Vol. 7, no 2, 21046Article in journal (Refereed) Published
Abstract [en]

The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2017. Vol. 7, no 2, 21046
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139278DOI: 10.1103/PhysRevX.7.021046ISI: 000404032900001OAI: oai:DiVA.org:liu-139278DiVA: diva2:1120979
Note

Funding Agencies|ARO [W911NF-15-2-0058]; AFOSR [FA9550-15-1-0029, FA9550-14-1-0231]; NSF MRSEC [DMR-1420709]; DOE LDRD Program; Swedish Research Council [621-2014-5825, 2016-04068]; AForsk foundation [16-576]; Carl-Trygger Stiftelse for Vetenskaplig Forskning [CTS 15:339]; Knut and Alice Wallenberg Foundation [KAW 2013.0300]; JSPS [26286047]; Swedish Energy Agency [43611-1]

Available from: 2017-07-07 Created: 2017-07-07 Last updated: 2017-07-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Ivády, ViktorJokubavicius, ValdasUl-Hassan, JawadSyväjärvi, MikaelNguyen, Son TienJanzén, Erik
By organisation
Theoretical PhysicsFaculty of Science & EngineeringSemiconductor Materials
In the same journal
Physical Review X
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 55 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf