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Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
Central Lab Appl Phys, Bulgaria.
Sofia University, Bulgaria.
Bulgarian Academic Science, Bulgaria.
Imperial Coll London, England.
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2017 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, no 8, 085005Article in journal (Refereed) Published
Abstract [en]

We present a study of melt grown dilute nitride InGaAsN layers by x-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectroscopy. The purpose of the study is to determine the degree of atomic ordering in the quaternary alloy during the epitaxial growth at near thermodynamic equilibrium conditions and its influence on band gap formation. Despite the low In concentration (similar to 3%) the XPS data show a strong preference toward In-N bonding configuration in the InGaAsN samples. Raman spectra reveal that most of the N atoms are bonded to In instead of Ga atoms and the formation of N-centred In3Ga1 clusters. PL measurements reveal smaller optical band gap bowing as compared to the theoretical predictions for random alloy and localised tail states near the conduction band minimum.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 32, no 8, 085005
Keyword [en]
dilute nitrides; InGaAsN; LPE; local ordering; microstructure
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139543DOI: 10.1088/1361-6641/aa7404ISI: 000405070800004OAI: oai:DiVA.org:liu-139543DiVA: diva2:1130149
Note

Funding Agencies|Bulgarian National Science Fund [KOCT 01/16]; Cost Action MP1406 Multiscale in modelling and validation for solar photovoltaics (MultiscaleSolar)

Available from: 2017-08-08 Created: 2017-08-08 Last updated: 2017-08-08

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Ivanov, Ivan Gueorguiev
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