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Effect of in-plane ordering on dielectric properties of highly {111}-oriented bismuth-zinc-niobate thin films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. University of Rennes 1, France.
University of Rennes 1, France.
University of Rennes 1, France.
University of Rennes 1, France.
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2017 (English)In: Journal of Materials Science, ISSN 0022-2461, E-ISSN 1573-4803, Vol. 52, no 19, 11306-11313 p.Article in journal (Refereed) Published
Abstract [en]

Bi1.5-xZn0.92-yNb1.5O6.92-delta (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111} Pt/TiO2/SiO2/(100) Si substrate (Pt/Si) and epitaxial {111} Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65: 35 on Pt/Si and 80: 20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (similar to 0.05).

Place, publisher, year, edition, pages
SPRINGER , 2017. Vol. 52, no 19, 11306-11313 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-139514DOI: 10.1007/s10853-017-1297-xISI: 000405306300013OAI: oai:DiVA.org:liu-139514DiVA: diva2:1130200
Note

Funding Agencies|Romanian Ministry of Research and Innovation [PN-III-16-48-02]; European Union (CPER-FEDER) [39126, 37339]; Region Bretagne

Available from: 2017-08-08 Created: 2017-08-08 Last updated: 2017-08-08

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