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Carbon-doped GaN on SiC materials for low-memory-effect devices
SweGaN AB, S-58330 Linkoping, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Chalmers, Sweden.
Chalmers, Sweden.
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2016 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, ELECTROCHEMICAL SOC INC , 2016, Vol. 75, no 12, 61-65 p.Conference paper, Published paper (Refereed)
Abstract [en]

AlGaN/GaN on SiC HEMT structures suitable for high power, high frequency applications are demonstrated. The material manifests record breaking thermal management and electron mobility. Moreover, thanks to the fact that the buffer layer is doped with carbon, the memory effect of processed devices is very low making system design and manufacturing significantly easier and less expensive.

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2016. Vol. 75, no 12, 61-65 p.
Series
ECS Transactions, ISSN 1938-5862
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-139929DOI: 10.1149/07512.0061ecstISI: 000406653000008ISBN: 978-1-60768-729-0 OAI: oai:DiVA.org:liu-139929DiVA: diva2:1135144
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society
Available from: 2017-08-22 Created: 2017-08-22 Last updated: 2017-08-22

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Janzén, Erik
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