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Silicon Carbide As a Robust Neural Interface (Invited)
University of Texas Dallas, TX 75080 USA.
University of S Florida, FL 33612 USA.
University of Texas Dallas, TX 75080 USA.
USF, FL 33617 USA.
Show others and affiliations
2016 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, ELECTROCHEMICAL SOC INC , 2016, Vol. 75, no 12, p. 39-45Conference paper, Published paper (Refereed)
Abstract [en]

The intracortical neural interface (INI) could be a key component of brain machine interfaces (BMI), devices which offer the possibility of restored physiological neurological functionality for patients suffering from severe trauma to the central or peripheral nervous system. Unfortunately the main components of the INI, microelectrodes, have not shown appropriate long-term reliability due to multiple biological, material, and mechanical issues. Silicon carbide (SiC) is a semiconductor that is completely chemically inert within the physiological environment and can be micromachined using the same methods as with Si microdevices. We are proposing that a SiC material system may provide the improved longevity and reliability for INI devices. The design, fabrication, and preliminary electrical and electrochemical testing of an all-SiC prototype microelectrode array based on 4H-SiC, with an amorphous silicon carbide (a-SiC) insulator, is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary electrochemical data are presented which show that these prototype electrodes display suitable performance.

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2016. Vol. 75, no 12, p. 39-45
Series
ECS Transactions, ISSN 1938-5862
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-139928DOI: 10.1149/07512.0039ecstISI: 000406653000006ISBN: 978-1-60768-729-0 (print)OAI: oai:DiVA.org:liu-139928DiVA, id: diva2:1135145
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society
Note

Funding Agencies|Florida Georgia Louis Stoke Alliance for Minority Participation (LSAMP) Bridge to Doctorate Fellowship; Alfred P. Sloan PhD minority program; Florida Education Fund McKnight Doctoral Fellowship

Available from: 2017-08-22 Created: 2017-08-22 Last updated: 2017-08-22

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Total: 75 hits
CiteExportLink to record
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Citation style
  • apa
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Output format
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