liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Silicon Carbide As a Robust Neural Interface (Invited)
University of Texas Dallas, TX 75080 USA.
University of S Florida, FL 33612 USA.
University of Texas Dallas, TX 75080 USA.
USF, FL 33617 USA.
Show others and affiliations
2016 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, ELECTROCHEMICAL SOC INC , 2016, Vol. 75, no 12, 39-45 p.Conference paper, Published paper (Refereed)
Abstract [en]

The intracortical neural interface (INI) could be a key component of brain machine interfaces (BMI), devices which offer the possibility of restored physiological neurological functionality for patients suffering from severe trauma to the central or peripheral nervous system. Unfortunately the main components of the INI, microelectrodes, have not shown appropriate long-term reliability due to multiple biological, material, and mechanical issues. Silicon carbide (SiC) is a semiconductor that is completely chemically inert within the physiological environment and can be micromachined using the same methods as with Si microdevices. We are proposing that a SiC material system may provide the improved longevity and reliability for INI devices. The design, fabrication, and preliminary electrical and electrochemical testing of an all-SiC prototype microelectrode array based on 4H-SiC, with an amorphous silicon carbide (a-SiC) insulator, is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary electrochemical data are presented which show that these prototype electrodes display suitable performance.

Place, publisher, year, edition, pages
ELECTROCHEMICAL SOC INC , 2016. Vol. 75, no 12, 39-45 p.
Series
ECS Transactions, ISSN 1938-5862
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-139928DOI: 10.1149/07512.0039ecstISI: 000406653000006ISBN: 978-1-60768-729-0 OAI: oai:DiVA.org:liu-139928DiVA: diva2:1135145
Conference
Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society
Note

Funding Agencies|Florida Georgia Louis Stoke Alliance for Minority Participation (LSAMP) Bridge to Doctorate Fellowship; Alfred P. Sloan PhD minority program; Florida Education Fund McKnight Doctoral Fellowship

Available from: 2017-08-22 Created: 2017-08-22 Last updated: 2017-08-22

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Ul-Hassan, Jawad
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 4 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf