Isotopic heterogeneity in synthetic and natural silicon carbide
2008 (English)In: Journal of Physics and Chemistry of Solids, ISSN 0022-3697, Vol. 69, no 10, 2492-2498 p.Article in journal (Refereed) Published
The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS). Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12C isotope relative to 6H domains, and they also show larger scatter in their observed silicon isotope ratios. We ascribe such heterogeneity to fluctuations of Si/C ratio in the growth medium and it is possible to model the spatial extent of such fluctuations. For the natural SiC grains the isotopic data suggest that they grew under relatively stable conditions, although some of them show significant isotopic zoning.
Place, publisher, year, edition, pages
2008. Vol. 69, no 10, 2492-2498 p.
Inorganic compounds, Crystal growth, Raman spectroscopy
IdentifiersURN: urn:nbn:se:liu:diva-15179DOI: 10.1016/j.jpcs.2008.05.005OAI: oai:DiVA.org:liu-15179DiVA: diva2:113587
Original publication: A.A. Shiryaev, M. Wiedenbeck, V. Reutsky, V.B. Polyakov, N.N. Mel’nik, A.A. Lebedev and R. Yakimova, Isotopic heterogeneity in synthetic and natural silicon carbide, 2008, Journal of Physics and Chemistry of Solids, (69), 10, 2492-2498.http://dx.doi.org/10.1016/j.jpcs.2008.05.005. Copyright: Elsevier B.V., http://www.elsevier.com/2008-10-222008-10-222009-05-14Bibliographically approved