Growth characteristics of chloride-based SiC epitaxial growth
2008 (English)In: Physica status solidi (RRL) - Rapid Research Letters, ISSN 1862-6270, Vol. 2, no 6, 278-280 p.Article in journal (Refereed) Published
In this study some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the C/Si and Cl/Si ratios have on the growth are studied. It is found that MTS is the most efficient precursor and that the growth becomes carbon limited at C/Si < 1.
Place, publisher, year, edition, pages
Wiley InterScience , 2008. Vol. 2, no 6, 278-280 p.
68.55.ag, 81.05 Hd, 81.15.Gh
IdentifiersURN: urn:nbn:se:liu:diva-15249DOI: 10.1002/pssr.200802183OAI: oai:DiVA.org:liu-15249DiVA: diva2:113757