Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates using chloride-based CVD
2009 (English)Conference paper (Refereed)
The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4HSiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20μm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Siface on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.
Place, publisher, year, edition, pages
2009. Vol. 600-603, 107-110 p.
chloride-based CVD growth, epilayers, on-axis, Si-face, high growth rate
IdentifiersURN: urn:nbn:se:liu:diva-15250DOI: 10.4028/www.scientific.net/MSF.600-603.107ISI: 000263555300025OAI: oai:DiVA.org:liu-15250DiVA: diva2:113758
International Conference on Silicon Carbide and Related Materials(ICSCRM-2007), 14-19 October 2007, Lake Biwa Resort, Otsu, Japan