Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 12, 3265-3272 p.Article in journal (Refereed) Published
A process optimization of the growth of SiC epilayers on 4° off-axis 4H-SiC substrates is reported. Process parameters such as growth temperature, C/Si-ratio and temperature ramp up conditions are optimized for the standard non-chlorinated growth in order to grow smooth epilayers without step-bunching and triangular defects. The growth of 6 μm thick n-type doped epitaxial layers on 75 mm diameter wafers is demonstrated as well as that of 20 μm thick layer. The optimized process was then transferred to a chloride-based process and a growth rate 28 μm/h was achieved without morphology degradation. A low growth temperature and a low C/Si ratio are the key parameters to reduce both the step-bunching and the formation of triangular defects.
Place, publisher, year, edition, pages
2009. Vol. 311, no 12, 3265-3272 p.
IdentifiersURN: urn:nbn:se:liu:diva-15251DOI: 10.1016/j.jcrysgro.2009.03.037OAI: oai:DiVA.org:liu-15251DiVA: diva2:113759