Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD
2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 311, no 5, 1321-1327 p.Article in journal (Refereed) Published
A systematic n-type doping study has been performed on 4H- and 6H-SiC epilayers grown at high growth rate using chloride-based CVD. The effect of temperature, pressure, growth rate, C/Si-, Cl/Si ratio and dopant flow on the incorporation of the nitrogen and phosphorus donor atoms have been investigated. It is found that the effect of the C/Si-ratio on the incorporation of nitrogen or phosphorus atoms is similar to what has been reported for the standard low growth rate process without addition of chlorine. The Cl/Si-ratio seems to affect the nitrogen incorporation at growth rates higher than 65 μm/h. The doping concentration is stable against variations in growth rate, growth pressure and growth temperature for the nitrogen doped layers.
Place, publisher, year, edition, pages
2009. Vol. 311, no 5, 1321-1327 p.
Doping, Chemical vapor deposition processes, Hot wall epitaxy, Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-15252DOI: 10.1016/j.jcrysgro.2008.12.029OAI: oai:DiVA.org:liu-15252DiVA: diva2:113760