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High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
Cavendish Laboratory, University of Cambridge, Cambridge, UK.
Cavendish Laboratory, University of Cambridge, Cambridge, UK.
Cavendish Laboratory, University of Cambridge, Cambridge, UK.
Cavendish Laboratory, University of Cambridge, Cambridge, UK.
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2017 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 29, article id 1604744Article in journal, Letter (Refereed) Published
Abstract [en]

Low-bandgap CH3NH3(PbxSn1–x)I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1s−1) intrinsic carrier mobilities.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2017. Vol. 29, article id 1604744
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140625DOI: 10.1002/adma.201604744ISI: 000392729200026PubMedID: 28066989Scopus ID: 2-s2.0-84997693768OAI: oai:DiVA.org:liu-140625DiVA, id: diva2:1138504
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-09-28Bibliographically approved

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Puttisong, Yuttapoom

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