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Power-dependent spin amplification in (In, Ga)As/GaAs quantum well via Pauli blocking by tunnel-coupled quantum dot ensembles
Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan.
Kitami Institute of Technology, Kitami Hokkaido, Japan.
Suzhou QiangMing Optoelectronics Co. Ltd., Suzhou, China.
Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan.
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 108, no 15, article id 152103Article in journal, Letter (Refereed) Published
Abstract [en]

Power-dependent time-resolved optical spin orientation measurements were performed on In0.1Ga0.9As quantum well(QW) and In0.5Ga0.5As quantum dot (QD) tunnel-coupled structures with an 8-nm-thick GaAs barrier. A fast transient increase of electron spin polarization was observed at the QW ground state after circular-polarized pulse excitation. The temporal maximum of polarization increased with increasing pumping fluence owing to enhanced spin blocking in the QDs, yielding a highest amplification of 174% with respect to the initial spin polarization. Further elevation of the laser power gradually quenched the polarizationdynamics, which was induced by saturated spin filling of both the QDs and the QW phase spaces.

Place, publisher, year, edition, pages
Melville, NY, United States: A I P Publishing LLC , 2016. Vol. 108, no 15, article id 152103
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140633DOI: 10.1063/1.4945740ISI: 000374314000019Scopus ID: 2-s2.0-84964460614OAI: oai:DiVA.org:liu-140633DiVA, id: diva2:1138521
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-12-18Bibliographically approved

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Chen, Shula

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