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Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan.
Kitami Institute of Technology, Kitami, Hokkaido, Japan.
Suzhou QiangMing Optoelectronics Co. Ltd., Suzhou, China.
Graduate School of Information Science and Technology, Hokkaido University, Kita-ku, Sapporo, Japan.
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 119, 115701Article in journal, Letter (Refereed) Published
Abstract [en]

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QDexcited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field.

Place, publisher, year, edition, pages
Melville, NY, United States: A I P Publishing LLC , 2016. Vol. 119, 115701
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140635DOI: 10.1063/1.4944039ISI: 000373383300044Scopus ID: 2-s2.0-84962244025OAI: oai:DiVA.org:liu-140635DiVA: diva2:1138522
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-09-14Bibliographically approved

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