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Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars
WPI-Advanced Institute for Material Research, Tohoku University, Sendai , Japan.
Kitami Institute of Technology, Kitami, Japan.
Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan.ORCID iD: 0000-0001-9421-8411
Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan.
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2017 (English)In: ACS Photonics, E-ISSN 2330-4022, Vol. 4, no 7, p. 1851-1857Article in journal (Refereed) Published
Abstract [en]

We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III–N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2017. Vol. 4, no 7, p. 1851-1857
Keywords [en]
III−N compound semiconductor; photoluminescence; quantum nanodisk
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140636DOI: 10.1021/acsphotonics.7b00460ISI: 000406174600037Scopus ID: 2-s2.0-85025079699OAI: oai:DiVA.org:liu-140636DiVA, id: diva2:1138528
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2019-06-28Bibliographically approved

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Chen, Shula

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