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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping
North Carolina State University, USA.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. North Carolina State University, USA.
Kyma Technology Inc, USA.
North Carolina State University, USA.
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2017 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 254, no 8, article id 1600713Article in journal (Refereed) Published
Abstract [en]

The thermal conductivity of bulk GaN grown by Hydride Phase Vapor Epitaxy with intentional Si doping was measured using the 3 method. The effect of Si concentration ranging from 1.6x10(16) to 7x10(18)cm(-3) on the thermal conductivity was studied over the temperature range of 295-470K. The room temperature thermal conductivity was found to decrease with increasing Si doping from 245 to 210W/m.K. Also, for each Si doped sample the thermal conductivity decreases with increasing temperature. The experimental data were analysed by a modified Callaway model and the contribution of different resistive phonon scattering process was examined. It was found that in n-type GaN the phonon-free-electron scattering became an important resistive process that leads to a reduction of the thermal conductivity at high temperatures. At the highest free electron concentrations, electronic thermal conduction was found to play a role in addition to lattice thermal conduction and compete with the effects of phonon-free-electron scattering. (C) 2017 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim

Place, publisher, year, edition, pages
WILEY-V C H VERLAG GMBH , 2017. Vol. 254, no 8, article id 1600713
Keywords [en]
GaN; HVPE growth; Si doping; thermal conductivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140521DOI: 10.1002/pssb.201600713ISI: 000407271200020OAI: oai:DiVA.org:liu-140521DiVA, id: diva2:1140109
Conference
9th International Workshop on Nitride Semiconductors (IWN)
Note

Funding Agencies|NSF [CBET-1336464]; Swedish Energy Agency [P39897-1]

Available from: 2017-09-11 Created: 2017-09-11 Last updated: 2017-09-11

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