Synthesis of α-Al2O3 thin films using reactive high power impulse magnetron sputtering
2008 (English)In: Europhysics letters, ISSN 0295-5075, Vol. 82, no 3, 36002- p.Article in journal (Refereed) Published
α-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low as 650 °C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an Ar/O2 gas mixture. The coatings consisted of plate-like crystallites, as revealed by scanning electron microscopy. α phase growth was retained over the studied range of substrate bias voltages (from floating potential up to -100 V), with films exhibiting a slightly denser microstructure at higher bias voltages. X-ray diffraction indicated that the α-alumina grains had a preferred orientation of (0001)-planes perpendicular to the substrate surface. X-ray analysis of films deposited at 575 °C indicated the presence of γ-alumina, whereas films grown at 500 °C or lower were X-ray amorphous.
Place, publisher, year, edition, pages
2008. Vol. 82, no 3, 36002- p.
IdentifiersURN: urn:nbn:se:liu:diva-15354DOI: 10.1209/0295-5075/82/36002OAI: oai:DiVA.org:liu-15354DiVA: diva2:114047
Erik Wallin, T. I. Selinder, M. Elfwing and Ulf Helmersson, Synthesis of α-Al2O3 thin films using reactive high power impulse magnetron sputtering, 2008, Europhysics letters, (82), 36002.
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