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Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Korea Adv Institute Science and Technology, South Korea.
Korea Adv Institute Science and Technology, South Korea.
Korea Adv Institute Science and Technology, South Korea.
Korea Adv Institute Science and Technology, South Korea.
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2017 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 7, 9356Article in journal (Refereed) Published
Abstract [en]

Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps which originate from differences in the indium-incorporation efficiency, internal polarization, and growth rate. Here, a-plane {11 (2) over bar0} facets, which are rarely formed in hexagonal pyramid based growth, are intentionally fabricated using mask patterns and adjustment of the core growth conditions. Moreover, the growth area covered by these facets is modified by changing the growth time. The origin of the formation of a-plane {11 (2) over bar0} facets is also discussed. Furthermore, due to a growth condition transition from a 3D core structure to an InGaN multi-quantum well, a growth front transformation (i.e., a transformation of a-plane {11 (2) over bar0} facets to semi-polar {11 (2) over bar2} facets) is directly observed. Based on our understanding and control of this novel growth mechanism, we can achieve efficient broadband LEDs or photovoltaic cells.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2017. Vol. 7, 9356
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140797DOI: 10.1038/s41598-017-09782-1ISI: 000408441600080PubMedID: 28839283OAI: oai:DiVA.org:liu-140797DiVA: diva2:1140891
Note

Funding Agencies|National Research Foundation of the Ministry of Education, and the Climate Change Research Hub of KAIST [NRF-2016R1A2A1A05005320, N11160013]

Available from: 2017-09-13 Created: 2017-09-13 Last updated: 2017-09-13

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Lim, Seung-Hyuk
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