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Scaling of elongation transition thickness during thin-film growth on weakly interacting substrates
Linköping University, Department of Physics, Chemistry and Biology, Nanoscale engineering. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-0908-7187
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Nanoscale engineering. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-4811-478X
Linköping University, Department of Physics, Chemistry and Biology, Nanoscale engineering. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-2864-9509
2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 111, no 8, article id 084101Article in journal (Refereed) Published
Abstract [en]

The elongation transition thickness (hElong) is a central concept in the theoretical description of thin-film growth dynamics on weakly interacting substrates via scaling relations of hElong with respect to rates of key atomistic film-forming processes. To date, these scaling laws have only been confirmed quantitatively by simulations, while experimental proof has been left ambiguous as it has not been possible to measure hElong. Here, we present a method for determining experimentally hElong for Ag films growing on amorphous SiO2: an archetypical weakly interacting film/substrate system. Our results confirm the theoretically predicted hElong scaling behavior, which then allow us to calculate the rates of adatom diffusion and island coalescence completion, in good agreement with the literature. The methodology presented herein casts the foundation for studying growth dynamics and cataloging atomistic-process rates for a wide range of weakly interacting film/substrate systems. This may provide insights into directed growth of metal films with a well-controlled morphology and interfacial structure on 2D crystals-including graphene and MoS2-for catalytic and nanoelectronic applications. Published by AIP Publishing.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 111, no 8, article id 084101
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-140966DOI: 10.1063/1.4993252ISI: 000408570000044Scopus ID: 2-s2.0-85028308625OAI: oai:DiVA.org:liu-140966DiVA, id: diva2:1142323
Note

Funding Agencies|Linkoping University (LiU) [Dnr-LiU-2015-01510]; Swedish research council [VR-2011-5312, VR-2015-04630]; Swedish National Infrastructure for Computing (SNIC) at the National Supercomputer Centre (NSC)

Available from: 2017-09-19 Created: 2017-09-19 Last updated: 2018-01-11Bibliographically approved
In thesis
1. Nano- and mesoscale morphology evolution of metal films on weakly-interacting surfaces
Open this publication in new window or tab >>Nano- and mesoscale morphology evolution of metal films on weakly-interacting surfaces
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Thin films are structures consisting of one or several nanoscale atomic layers of material that are used to either functionalize a surface or constitute components in more complex devices. Many properties of a film are closely related to its microstructure, which allows films to be tailored to meet specific technological requirements. Atom-by-atom film growth from the vapor phase involves a multitude of atomic processes that may not be easily studied experimentally in real-time because they occur in small length- (≤ Å) and timescales (≤ ns). Therefore, different types of computer simulation methods have been developed in order to test theoretical models of thin film growth and unravel what experiments cannot show. In order to compare simulated and experimental results, the simulations must be able to model events on experimental time-scales, i.e. on the order of microseconds to seconds. This is achievable with the kinetic Monte Carlo (kMC) method.

In this work, the initial growth stages of metal deposition on weakly-interacting substrates is studied using both kMC simulations as well as experiments whereby growth was monitored using in situ probes. Such film/substrate material combinations are widely encountered in technological applications including low-emissivity window coatings to parts of microelectronics components. In the first part of this work, a kMC algorithm was developed to model the growth processes of island nucleation, growth and coalescence when these are functions of deposition parameters such as the vapor deposition rate and substrate temperature. The dynamic interplay between these growth processes was studied in terms of the scaling behavior of the film thickness at the elongation transition, for both continuous and pulsed deposition fluxes, and revealed in both cases two distinct growth regimes in which coalescence is either active or frozen out during deposition. These growth regimes were subsequently confirmed in growth experiments of Ag on SiO2, again for both pulsed and continuous deposition, by measuring the percolation thickness as well as the continuous film formation thickness. However, quantitative agreement with regards to scaling exponents in the two growth regimes was not found between simulations and experiments, and this prompted the development of a method to determine the elongation transition thickness experimentally. Using this method, the elongation transition of Ag on SiO2 was measured, with scaling exponents found in much better agreement with the simulation results. Further, these measurement data also allowed the calculation of surface properties such as the terrace diffusion barrier of Ag on SiO2 and the average island coalescence rate.

In the second part of this thesis, pioneering work is done to develop a fully atomistic, on-lattice model which describes the growth of Ag on weakly-interacting substrates. Simulations performed using this model revealed several key atomic-scale processes occurring at the film/substrate interface and on islands which govern island shape evolution, thereby contributing to a better understanding of how 3D island growth occurs at the atomic scale for a wide class of materials. The latter provides insights into the directed growth of metal nanostructures with controlled shapes on weakly-interacting substrates, including twodimensional crystals for use in catalytic and nano-electronic applications.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2018. p. 68
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1835
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:liu:diva-144217 (URN)10.3384/diss.diva-144217 (DOI)9789176855706 (ISBN)
Public defence
2018-02-02, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
Opponent
Supervisors
Funder
Swedish Research CouncilÅForsk (Ångpanneföreningen's Foundation for Research and Development)
Note

I den tryckta versionen saknades den populärvetenskapliga sammanfattningen på svenska. I den elektroniska versionen är den tillagd mellan Abstract (sida II) och Preface (sida III).

Available from: 2018-01-11 Created: 2018-01-11 Last updated: 2018-01-12Bibliographically approved

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