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Optical detection of ballistically injected electrons in III/V heterostructures
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
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2001 (English)In: PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN , 2001, Vol. 87, 819-820 p.Conference paper (Refereed)
Abstract [en]

We present a novel spectroscopic technique which is based on the ballistic injection of minority carriers from the tip of an STM into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier relaxation rate Gamma (s) after injection can be determined. From current dependent measurements we find that carrier trapping by impurities causes a significant non-radiative recombination channel at room temperature.

Place, publisher, year, edition, pages
SPRINGER-VERLAG BERLIN , 2001. Vol. 87, 819-820 p.
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-141529ISI: 000171592800387ISBN: 3-540-41778-8 OAI: oai:DiVA.org:liu-141529DiVA: diva2:1145586
Conference
25th International Conference on the Physics of Semiconductors (ICPS25)
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-04

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Kemerink, Martijn
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