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Quantitative determination of the charge density on surface steps on semiconductors by high-resolution local scanning-tunneling spectroscopy
Eindhoven University of Technology, Germany.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Germany.
Eindhoven University of Technology, Germany.
Eindhoven University of Technology, Germany.
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2002 (English)In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 13, no 2-4, 1159-1162 p.Article in journal (Refereed) Published
Abstract [en]

A novel technique is developed to follow the energetic position of the conduction and valence bands with respect to the Fermi level as a function of the lateral position on semiconductor surfaces. By combining high-resolution scanning-tunneling spectroscopy measurements with model calculations it is possible to relate the apparent change in conduction and valence band position to their real counterparts. This method allows one to determine the charge on surface artifacts like steps or vacancies, For a single step on p-type GaAs we find a charge of 0.9+/-0.3q nm(-1). (C) 2002 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2002. Vol. 13, no 2-4, 1159-1162 p.
Keyword [en]
scanning-tunneling microscopy; surface step; p-n junction; GaAs
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-141524DOI: 10.1016/S1386-9477(02)00326-0ISI: 000176869100249OAI: oai:DiVA.org:liu-141524DiVA: diva2:1145591
Conference
10th International Conference on Modulated Semiconductor Structures
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-04

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Kemerink, Martijn
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