liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Show others and affiliations
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 19, 192104Article in journal (Refereed) Published
Abstract [en]

The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a p-type transistor is demonstrated. During gate bias stress, a decrease in current is observed, that is correlated with the increased curvature of the potential profile. After gate bias stress, the potential changes consistently in all operating regimes: the potential profile gets more convex, in accordance with the simultaneously observed shift in threshold voltage. The changes of the potential are attributed to positive immobile charges, which contribute to the potential, but not to the current. (C) 2007 American Institute of Physics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2007. Vol. 90, no 19, 192104
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-141502DOI: 10.1063/1.2737419ISI: 000246413400037OAI: oai:DiVA.org:liu-141502DiVA: diva2:1145666
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-06

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Kemerink, M.
In the same journal
Applied Physics Letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 6 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf