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Charge trapping at the dielectric of organic transistors visualized in real time and space
Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands.
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
Merck Chemistry, England.
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2008 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 5, 975-+ p.Article in journal (Refereed) Published
Abstract [en]

Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2008. Vol. 20, no 5, 975-+ p.
National Category
Physical Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-141498DOI: 10.1002/adma.200702688ISI: 000254181900018OAI: oai:DiVA.org:liu-141498DiVA: diva2:1145672
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-06

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Kemerink, Martijn
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