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Real versus measured surface potentials in scanning Kelvin probe microscopy
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
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2008 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 2, no 4, 622-626 p.Article in journal (Refereed) Published
Abstract [en]

Noncontact potentiometry or scanning Kelvin probe microscopy (SKPM) is a widely used technique to study charge injection and transport in (in)organic devices by measuring a laterally resolved local potential. This technique suffers from the significant drawback that experimentally obtained curves do not generally reflect the true potential profile in the device due to nonlocal coupling between the probing tip and the device. In this work, we quantitatively explain the experimental SKPM response and by doing so directly link theoretical device models to real observables. In particular, the model quantitatively explains the effects of the tip-sample distance and the dependence on the orientation of the probing tip with respect to the device.

Place, publisher, year, edition, pages
American Chemical Society , 2008. Vol. 2, no 4, 622-626 p.
Keyword [en]
scanning Kelvin probe microscopy; electrical characterization; capacitive coupling; numerical modeling; organic transistors
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Identifiers
URN: urn:nbn:se:liu:diva-141496DOI: 10.1021/nn700190tISI: 000255216000005PubMedID: 19206591OAI: oai:DiVA.org:liu-141496DiVA: diva2:1145674
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-06

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Kemerink, Martijn
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