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On the width of the recombination zone in ambipolar organic field effect transistors
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
Philips Research Labs, Netherlands; University of Groningen, Netherlands.
Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 3, 033312Article in journal (Refereed) Published
Abstract [en]

The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given by W = root 4.34d delta, with d and delta the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device. (C) 2008 American Institute of Physics.

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American Institute of Physics (AIP) , 2008. Vol. 93, no 3, 033312
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URN: urn:nbn:se:liu:diva-141494DOI: 10.1063/1.2963488ISI: 000257968700087OAI: oai:DiVA.org:liu-141494DiVA: diva2:1145676
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-09-29

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Kemerink, M.
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