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Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors
University of Cambridge, England; Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
University of Cambridge, England.
University of Cambridge, England.
University of Cambridge, England.
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 80, no 11, 115325Article in journal (Refereed) Published
Abstract [en]

The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H(2)O traces could be eliminated. The shape of the channel potential is inconsistent with a density-independent mobility. We find that the variable range hopping model as derived by Vissenberg and Matters for an exponential density of states [Phys. Rev. B 57, 12964 (1998)] consistently describes the data.

Place, publisher, year, edition, pages
American Physical Society , 2009. Vol. 80, no 11, 115325
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-141485DOI: 10.1103/PhysRevB.80.115325ISI: 000270383200100OAI: oai:DiVA.org:liu-141485DiVA: diva2:1145687
Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-09-29

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Kemerink, M.
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