The availability of a reliable memory element is crucial for the fabrication of plastic logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm(2). (C) 2011 Elsevier B. V. All rights reserved.
Funding Agencies|EU [212311]