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The operational mechanism of ferroelectric-driven organic resistive switches
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
University of Groningen, Netherlands; Philips Research Labs, Netherlands.
University of Groningen, Netherlands; Holst Centre, Netherlands.
University of Groningen, Netherlands; Philips Research Labs, Netherlands.
2012 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 13, no 1, 147-152 p.Article in journal (Refereed) Published
Abstract [en]

The availability of a reliable memory element is crucial for the fabrication of plastic logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm(2). (C) 2011 Elsevier B. V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 13, no 1, 147-152 p.
Keyword [en]
Charge transport; Organic semiconductors; Ferroelectric nanostructures; Data storage; Thin films
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Identifiers
URN: urn:nbn:se:liu:diva-141455DOI: 10.1016/j.orgel.2011.10.013ISI: 000298152100022OAI: oai:DiVA.org:liu-141455DiVA: diva2:1145768
Note

Funding Agencies|EU [212311]

Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-09-29

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Kemerink, Martijn
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