Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect TransistorsShow others and affiliations
2012 (English)In: Small, ISSN 1613-6810, E-ISSN 1613-6829, Vol. 8, no 2, p. 241-245Article in journal (Refereed) Published
Abstract [en]
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2012. Vol. 8, no 2, p. 241-245
Keywords [en]
organosilanes; self-assembly; organic field-effect transistors; threshold voltage; scanning Kelvin-probe microscopy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-141453DOI: 10.1002/smll.201101467ISI: 000299100500009PubMedID: 22121119OAI: oai:DiVA.org:liu-141453DiVA, id: diva2:1145796
Note
Funding Agencies|Dutch Polymer Institute [624]; European project ONE-P [212311]
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