liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Light Emission in the Unipolar Regime of Ambipolar Organic Field-Effect Transistors
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
Show others and affiliations
2013 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 23, no 33, p. 4133-4139Article in journal (Refereed) Published
Abstract [en]

Light emission from ambipolar organic field-effect transistors (OFETs) is often observed when they are operated in the unipolar regime. This is unexpected, the light emission should be completely suppressed, because in the unipolar regime only one type of charge carrier is accumulated. Here, an electroluminescent diketopyrrolopyrrole copolymer is investigated. Local potential measurements by scanning Kelvin probe microscopy reveal a recombination position that is unstable in time due to the presence of injection barriers. The electroluminescence and electrical transport have been numerically analyzed. It is shown that the counterintuitive unipolar light emission is quantitatively explained by injection of minority carriers into deep tail states of the semiconductor. The density of the injected minority carriers is small. Hence they are relatively immobile and they recombine close the contact with accumulated majority carriers. The unipolar light output is characterized by a constant efficiency independent of gate bias. It is argued that light emission from OFETs predominantly originates from the unipolar regime when the charge transport is injection limited.

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2013. Vol. 23, no 33, p. 4133-4139
Keywords [en]
light-emitting organic field-effect transistors; injection barrier; diketopyrrolopyrrole; recombination positions
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-141430DOI: 10.1002/adfm.201203568ISI: 000327492300010OAI: oai:DiVA.org:liu-141430DiVA, id: diva2:1145822
Note

Funding Agencies|NanoNextNL [06D.03]

Available from: 2017-09-29 Created: 2017-09-29 Last updated: 2017-10-09

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Kemerink, Martijn
In the same journal
Advanced Functional Materials
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 110 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf