Field Effect Based Gas Sensors, from Basic Mechanisms to the Latest Commercial Device Designs 2016 (English)In: SENSORS AND ELECTRONIC INSTRUMENTATION ADVANCES (SEIA), INT FREQUENCY SENSOR ASSOC-IFSA , 2016, p. 19-21Conference paper, Published paper (Refereed)

Abstract [en]

This contribution treats the latest developments in the understanding of basic principles regarding device design, transduction mechanisms, gas-materials-interactions, and materials processing for the tailored design and fabrication of SiC FET gas sensor devices, mainly intended as products for the automotive sector.

Place, publisher, year, edition, pages

INT FREQUENCY SENSOR ASSOC-IFSA , 2016. p. 19-21

Keywords [en]

SiC; Field Effect Transistors; Gas sensors; Automotive; Emissions monitoring; Sensor product development

National Category

Other Engineering and Technologies

Identifiers

URN: urn:nbn:se:liu:diva-141848ISI: 000411474200006ISBN: 978-84-608-9963-1 (print)OAI: oai:DiVA.org:liu-141848DiVA, id: diva2:1147961

Conference

2nd International Conference on Sensors and Electronic Instrumentation Advances (SEIA)

Available from: 2017-10-09 Created: 2017-10-09 Last updated: 2025-02-18

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Andersson, MikeMöller, PeterFashandi, HosseinEriksson, JensPuglisi, DonatellaLloyd Spetz, Anita

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Sensor and Actuator SystemsFaculty of Science & EngineeringThin Film Physics

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