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Energy Level Alignment of N-Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. East China Normal University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Soochow University, Peoples R China.
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2017 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 9, no 40, 35476-35482 p.Article in journal (Refereed) Published
Abstract [en]

Doping has been proved to be one of the powerful technologies to achieve significant improvement in the performance of organic electronic devices. Herein, we systematically map out the interface properties of solution-processed air-stable n-type (4(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) doping fullerenes and fullerene derivatives and establish a universal energy level alignment scheme for this class of n-doped system. At low doping levels at which the charge-transfer doping induces mainly bound charges, the energy level alignment of the n-doping organic semiconductor can be described by combining integer charger transfer-induced shifts with a so-called double-dipole step. At high doping levels, significant densities of free charges are generated and the charge flows between the organic film and the conducting electrodes equilibrating the Fermi level in a classic "depletion layer" scheme. Moreover, we demonstrate that the model holds for both n- and p-doping of pi-backbone molecules and polymers. With the results, we provide wide guidance for identifying the application of the current organic n-type doping technology in organic electronics.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2017. Vol. 9, no 40, 35476-35482 p.
Keyword [en]
doping energy level alignment; Interfaces; spectroscopy; organic semiconductor; organic electronics
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-142838DOI: 10.1021/acsami.7b11768ISI: 000413131500098PubMedID: 28929733OAI: oai:DiVA.org:liu-142838DiVA: diva2:1154927
Note

Funding Agencies|National Science Foundation of China [11604099]; East China Normal Univeristy; Swedish Foundation for Strategic Research [SE13-0060]; Swedish Research Council [2016-05498]; Goran Gustafsson Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]

Available from: 2017-11-06 Created: 2017-11-06 Last updated: 2017-12-05

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The full text will be freely available from 2018-09-20 15:19
Available from 2018-09-20 15:19

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