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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
FAU Erlangen Nurnberg, Germany.
FAU Erlangen Nurnberg, Germany.
FAU Erlangen Nurnberg, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2017 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 478, p. 159-162Article in journal (Refereed) Published
Abstract [en]

We have developed a transfer process of 3C-SiC-on-Si (100) seeding layers grown by chemical vapor deposition onto a poly-or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [100] direction resulting in large area crystals (up to approximate to 11 cm(2)) with a thickness of up to approximately 850 lm. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals. (C) 2017 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2017. Vol. 478, p. 159-162
Keywords [en]
3C-SiC; Quasi-bulk; Sublimation epitaxy; DPB free; Single crystalline; Stacking faults
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-142964DOI: 10.1016/j.jcrysgro.2017.09.002ISI: 000413647300026OAI: oai:DiVA.org:liu-142964DiVA, id: diva2:1156571
Note

Funding Agencies|STAEDLER Foundation [WW/eh13/15]; European commission (CHALLENGE project) [720827]

Available from: 2017-11-13 Created: 2017-11-13 Last updated: 2017-11-13

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Syväjärvi, Mikael
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  • apa
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