In this study, we demonstrate the characteristics of high quality boron nitride (BN) thin films for high performance 2 dimensional nanoelectronics. Such thin films were deposited using solution-process technology such as spin-coating, spraying and aerosol deposition at low temperature of 100 degrees C. The material properties of these BN thin films with optimized fabrication processes are competitive with those of BN deposited by employing the vacuum chemical vapor deposition technique. In order to characterize the material properties of solution-processed BN thin films, various measurements including atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were performed. The optimized solution-process based on BN thin films are practical and reproducible in achieving high performance flexible nanoelectronics which require low process temperature and good uniformity in large-area.